HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE

ABSTRACT

A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.

RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No. 14/277,820, filed May 15, 2014, which is a continuation-in-part of U.S. patent application Ser. No. 13/893,998, filed May 14, 2013, which is a continuation-in-part of U.S. patent application Ser. No. 13/588,329, filed Aug. 17, 2012, which claims the benefit of U.S. provisional patent application No. 61/533,254, filed Sep. 11, 2011, the disclosures of which are hereby incorporated herein by reference in their entirety.

FIELD OF THE DISCLOSURE

The present disclosure relates to power modules for controlling power delivery to a load.

BACKGROUND

As power costs continue to rise and environmental impact concerns mount, the demand for power devices with increased performance and efficiency continues to grow. One way to improve the performance and efficiency of a power device is by fabricating the device using silicon carbide (SiC). Power devices made with SiC are expected to show great advantages compared to conventional silicon power devices in switching speed, power handling capability, and temperature handling capability. Specifically, the high critical field and wide band gap of SiC devices allows for increases in both performance and efficiency when compared to conventional silicon devices.

Due to the performance limitations inherent in silicon, a conventional power device may require a bipolar structure, such as that of an insulated gate bipolar transistor (IGBT), when blocking high voltages (e.g., voltages greater than 5 kV). While utilizing a bipolar structure generally decreases the resistance of the drift layer due to conductivity modulation thereof, bipolar structures also suffer from relatively slow switching times. As will be appreciated by those of ordinary skill in the art, the reverse recovery time (attributed to the relatively slow diffusion of minority carriers) of a bipolar structure limits the maximum switching time thereof, thereby making silicon devices generally unsuitable for high voltage and high frequency applications.

Due to the performance enhancements discussed above with respect to SiC power devices, unipolar SiC power devices may be used to block voltages up to 10 kV or more. The majority carrier nature of such unipolar SiC power devices effectively eliminates the reverse recovery time of the device, thereby allowing for very high switching speeds (e.g., less than 100 ns for a double-diffused metal-oxide-semiconductor field-effect transistor (DMOSFET) with a 10 kV blocking capability and a specific on-resistance of about 100 mQ*cm²).

Power devices are often interconnected and integrated into a power module, which operates to dynamically switch large amounts of power through various components such as motors, inverters, generators, and the like. As discussed above, due to the rising cost of power and environmental impact concerns, there is a continuing need for power modules that are smaller, less expensive to manufacture, and more efficient, while simultaneously providing similar or better performance than their conventional counterparts.

SUMMARY

The present disclosure relates to power modules for controlling power delivery to a load. According to one embodiment, a power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. Together, the switch modules are able to block 1200 volts, conduct 300 amperes, and have switching losses of less than 20 milli-Joules. By including switching modules in the power module such that the power module has switching losses of less than 20 milli-Joules for a 1200V/300A rating, the performance of the power module is significantly improved when compared to conventional power modules.

According to one embodiment, a power module includes a housing with an interior chamber, at least one power substrate within the interior chamber, and a gate connector. The power substrate includes a switch module on a first surface of the power substrate for facilitating switching power to a load. The switch module includes at least one transistor and at least one diode. The gate connector is coupled to a gate contact of the at least one transistor via a signal path that includes a first conductive trace on the first surface of the power substrate. Using a conductive trace on the first surface of the power substrate to connect the gate connector to the gate of the at least one transistor reduces interference in the power module and increases the reliability of the connection between the gate connector and the gate contact of the at least one transistor.

According to one embodiment, a power module includes a housing with an interior chamber, a pair of output contacts, and a plurality of switch modules. The plurality of switch modules are mounted within the interior chamber of the housing, and are interconnected to facilitate switching power from a power source coupled between the output contacts to a load. The pair of output contacts are arranged such that an area of at least 150 mm² of each one of the output contacts is located less than 1.5 mm from the other output contact. Providing an area of each output contact of at least 150 mm² that is less than 1.5 mm from the other output contact reduces the leakage inductance between the output contacts, thereby increasing the performance of the power module.

Those skilled in the art will appreciate the scope of the present disclosure and realize additional aspects thereof after reading the following detailed description of the preferred embodiments in association with the accompanying drawing figures.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

The accompanying drawing figures incorporated in and forming a part of this specification illustrate several aspects of the disclosure, and together with the description serve to explain the principles of the disclosure.

FIG. 1 is a schematic illustrating the details of a power module according to one embodiment of the present disclosure.

FIG. 2 is a graph illustrating the various signals produced by the power module shown in FIG. 1.

FIG. 3 is a schematic illustrating the details of the switching modules in the power module shown in FIG. 1.

FIG. 4 is a block diagram illustrating details of the power module shown in FIG. 1 according to one embodiment of the present disclosure.

FIG. 5 is a plan-view illustrating details of the power module shown in FIG. 1 according to one embodiment of the present disclosure.

FIG. 6 is a plan-view illustrating further details of the power module shown in FIG. 1 according to one embodiment of the present disclosure.

FIG. 7 is a plan-view illustrating an outer housing of the power module shown in FIG. 1 according to one embodiment of the present disclosure.

FIG. 8 is a plan-view illustrating details of the outer housing of the power module shown in FIG. 1 according to one embodiment of the present disclosure.

FIG. 9 is a block diagram illustrating details of the power substrates in the power module shown in FIG. 4 according to one embodiment of the present disclosure.

DETAILED DESCRIPTION

The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.

It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.

It will be understood that when an element such as a layer, region, or substrate is referred to as being “on” or extending “onto” another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” or extending “directly onto” another element, there are no intervening elements present. Likewise, it will be understood that when an element such as a layer, region, or substrate is referred to as being “over” or extending “over” another element, it can be directly over or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly over” or extending “directly over” another element, there are no intervening elements present. It will also be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present.

Relative terms such as “below” or “above” or “upper” or “lower” or “horizontal” or “vertical” may be used herein to describe a relationship of one element, layer, or region to another element, layer, or region as illustrated in the Figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises,” “comprising,” “includes,” and/or “including” when used herein specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

FIG. 1 shows an exemplary power module 10 according to one embodiment of the present disclosure. The power module 10 includes two switch modules SM1 and SM2, which are controlled by a control system 12 to deliver power from a power supply (DC+/DC−) to a load 14 in a controlled manner. As will be appreciated by those of ordinary skill in the art, the switch modules SM1 and SM2 form a half-bridge, the details of which are discussed below. Each one of the switch modules SM1 and SM2 includes at least a first transistor in anti-parallel with a first diode. Specifically, a first switch module SM1 includes a first transistor Q1 in anti-parallel with a first diode D1, and a second switch module SM2 includes a second transistor Q2 in anti-parallel with a second diode D2. In one embodiment, the first transistor Q1 and the second transistor Q2 are metal-oxide-semiconductor field-effect transistors (MOSFETs). However, those of ordinary skill in the art will appreciate that any suitable switching device, for example, insulated gate bipolar transistors (IGBTs), field-effect transistors (FETs), junction field-effect transistors (JFETs), high electron mobility transistors (HEMTs), or the like, may be used in the switching modules SM1 and SM2 without departing from the principles of the present disclosure. The first diode D1 and the second diode D2 may be Schottky diodes, and in particular, junction barrier Schottky diodes. Again, those of ordinary skill in the art will appreciate that any suitable diode device, for example, P-N diodes and PiN diodes, may be used in the switching modules SM1 and SM2 without departing from the principles of the present disclosure. In one embodiment, the first diode D1 and the second diode D2 are omitted, and their functionality is replaced by the internal body diode of the first transistor Q1 and the second transistor Q2, respectively. Using the internal body diode of the first transistor Q1 and the second transistor Q2 in place of the first diode D1 and the second diode D2 may save space and cost in the power module 10.

A gate contact G of the first transistor Q1 and a source contact S of the first transistor Q1 are coupled to the control system 12. Similarly, a gate contact G and a source contact S of the second transistor Q2 are also coupled to the control system 12. Notably, the connection from the gate contact G to the first transistor Q1 and the second transistor Q2 to the control system 12 may be accomplished via a relatively low power gate connector G1 and G2, respectively. Similarly, the connection from the source contact S of the first transistor Q1 and the second transistor Q2 to the control system 12 may be accomplished via a low-power source return connection S1 and S2 used to measure one or more operational parameters of the first transistor Q1 or the second transistor Q1, respectively. A drain contact D of the first transistor Q1 is coupled to a positive power supply terminal DC+. A drain contact D of the second transistor Q2 is coupled to an output terminal OUT. The source contact S of the first transistor Q1 is also coupled to the output terminal OUT. The source contact S of the second transistor Q2 is coupled to a negative power supply terminal DC−. Finally, the load 14 is coupled between the output terminal OUT and the negative DC power supply terminal DC−.

The first transistor Q1, the first diode D1, the second transistor Q2, and the second diode D2 may each be majority carrier devices. Majority carrier devices generally include FETs such as MOSFETs, HEMTs, JFETs, and the like, but do not include thyristors, bipolar transistors, and insulated gate bipolar transistors (IGBTs). Accordingly, the power module 10 may be capable of operating at higher switching speeds and suffer lower switching losses when compared to a conventional power module employing bipolar devices. In one embodiment, the first transistor Q1, the first diode D1, the second transistor Q2, and the second diode D2 are wide band-gap devices. For purposes of the present disclosure, a wide band-gap device is a semiconductor device with a band-gap greater than or equal to 3.0 electron-volts (eV). For example, the first transistor Q1, the first diode D1, the second transistor Q2, and the second diode D2 may be silicon carbide (SiC) or gallium nitride (GaN) devices. For reference purposes, Si has a bandgap of approximately 1.1 eV, while SiC has a band-gap of approximately 3.3 eV. As discussed above, using SiC for the first transistor Q1, the first diode D1, the second transistor Q2, and the second diode D2, significantly reduces the switching time of each one of the devices when compared to a conventional silicon (Si) IGBT-based power module, and further suffers lower switching losses. For example, if the power module 10 is rated at 1200V and 300A, the power module 10 may maintain switching losses of less than 25 milli-Joules (mJ), less than 20 mJ, and even less than 15 mJ in various embodiments when operating between −40 C and 150 C, while also providing a low on-state voltage drop. As will be appreciated by those of ordinary skill in the art, the switching losses of the power module 10 generally will not fall below 1 mJ. In an additional embodiment, the first transistor Q1, the first diode D1, the second transistor Q2, and the second diode D2 are both majority carrier devices and wide band-gap devices.

In operation, the control system 12 operates the first switching module SM1 and the second switching module SM2 in a complementary fashion, such that when the first switching module SM1 is conducting, the second switching module SM2 is blocking, and vice-versa. A graph showing the voltage at the gate contact G of the first transistor Q1, the voltage at the gate contact G of the second transistor Q2, the voltage at the output terminal OUT, and the current through the load 14 over the course of a switching cycle of the power module 10 is shown in FIG. 2. During a first time period T1 the first switching module SM1 is conducting, while the second switching module SM2 is blocking. Accordingly, the output terminal OUT is connected to the positive power supply terminal DC+, thereby providing a positive power supply voltage to the load 14 and causing current to flow from the positive power supply terminal DC+ through the first transistor Q1 and into the load 14. Generally, the load 14 is an inductive load, thereby causing the current through the load 14 to slowly ramp up while the first switching module SM1 is conducting.

During a second time period T2, the first switching module SM1 is switched to a blocking mode. Further, the second switching module SM2 remains in a blocking mode. In this time period, current continues to flow to the load 14 from the output terminal OUT due to the internal capacitances associated with each one of the first switching module SM1 and the second switching module SM2. Specifically, about half of the current through the load 14 is provided by the internal capacitance of each one of the switching modules SM1 and SM2. The voltage at the output terminal OUT therefore slews to ground at a given rate, and the current through the load 14 gradually decreases.

As the second switching module SM2 is switched to a conducting mode in a third time period T3, the output terminal OUT is coupled to the negative power supply terminal DC−, which may be ground in some embodiments. Accordingly, current flows through the second transistor Q2 and into the load 14 through the output terminal OUT, causing the current to become increasingly negative.

During a fourth time period T4, the second switching module SW2 is switched to a blocking mode. Further, the first switching module SM1 remains in a blocking mode. In this time period, a negative current continues to flow to the load from the output terminal OUT due to the internal capacitances associated with each one of the first switching module SM1 and the second switching module SM2. Specifically, about half of the current through the load 14 is provided by the internal capacitance of each one of the switching modules SM1 and SM2. The voltage at the output terminal OUT therefore slews from ground to the positive power supply voltage provided at the positive power supply terminal DC+, and the current through the load 14 becomes increasingly positive. Finally, during a fifth time period T5, the switching cycle starts over, such that the first switching module SM1 is placed in a conducting mode while the second switching module SM2 remains in a blocking mode.

FIG. 3 shows details of the first switching module SM1 according to one embodiment of the present disclosure. The second switching module SM2 may be configured similarly to the first switching module SM2, but is not shown for brevity. As shown in FIG. 3, the first transistor Q1 and the first diode D1 of the first switching module SM1 may include multiple transistors Q1 ₁₋₆ and multiple anti-parallel diodes D1 ₁₋₆ coupled in parallel. Specifically, the drain contacts D of each one of a number of transistors Q1 ₁₋₆ may be coupled together, the source contacts S of each one of the transistors Q1 ₁₋₆ may be coupled together, and the gate contacts G of each one of the transistors Q1 ₁₋₆ may each be coupled together through a gate resistor R_(G). Each one of the transistors Q1 ₁₋₆ includes an anti-parallel diode D1 ₁₋₆ coupled between the source contact S and the drain contact D thereof. Although six transistors Q1 ₁₋₆ are shown coupled in parallel with six anti-parallel diodes D1 ₁₋₆, any number of transistors and anti-parallel diodes may be used without departing from the principles of the present disclosure.

Including multiple parallel-coupled transistors Q1 ₁₋₆ and multiple anti-parallel diodes D1 ₁₋₆ allows the first switching module SM1 to handle larger amounts of power than would otherwise be possible. For example, in one embodiment each one of the transistors Q1 ₁₋₆ is rated to block 1.2 kV and conduct 50 A, thereby making the first switching module SM1 capable of conducting 300 A. In other embodiments, each one of the transistors Q1 ₁₋₆ may be rated to block 1.2 kV and conduct 40 A, thereby making the first switching module SM1 capable of conducting 240 A. In yet another embodiment, each one of the transistors Q1 ₁₋₆ may be rated to block 1.2 kV and conduct 20 A, thereby making the first switching module SM1 capable of conducting 120 A.

The gate resistors R_(G) may be provided to dampen any undesirable oscillations in the first switching module SM1 that may occur when the first switching module SM1 is driven at a relatively high transition speed (e.g., greater than 20 V/ns). The resistance of the gate resistors R_(G) may vary according to the current rating of each one of the transistors Q1 ₁₋₆, and therefore, the overall current rating of the first switching module SM1. In one embodiment wherein the first switching module SM1 has a current rating of 120 A, each one of the gate resistors R_(G) has a resistance between about 1Ω and 15Ω. In an additional embodiment wherein the first switching module SM1 has a current rating of 240 A, each one of the gate resistors R_(G) has a resistance between about 1Ω and 15Ω. In yet another embodiment wherein the first switching module SM1 has a current rating of 300 A, each one of the gate resistors has a resistance between about 15Ω and 20Ω.

FIG. 4 shows details of the power module 10 according to one embodiment of the present disclosure. As shown in FIG. 4, the power module 10 includes a housing 16 provided with an interior chamber 18 that holds one or more power substrates 20. Specifically, the interior chamber 18 of the housing 16 holds a first power substrate 20A, a second power substrate 20B, a third power substrate 20C, and a fourth power substrate 20D. Those of ordinary skill in the art will appreciate that the interior chamber 18 of the housing 16 can hold any number of power substrates 20 without departing from the principles of the present disclosure. Each one of the power substrates 20 is shown including multiple transistors Q, multiple diodes D, and multiple resistors R, that represent the primary components of the first switching module SM1 and the second switching module SM2. In one embodiment, the first switching module SM1 is provided by the first power substrate 20A and the second power substrate 20B, while the second switching module SM2 is provided by the third power substrate 20C and the fourth power substrate 20D, respectively. The necessary interconnects between the components on each one of the power substrates 20 may be provided by metal traces (not shown) on the surface of the power substrates 20. Further, wire bonds (not shown) may be provided to interconnect the different power substrates 20, as well as to connect the power substrates 20 to one or more external connectors (not shown). The power substrates 20 may be mounted to a mounting structure 22 that is affixed to the housing 16. In one embodiment, the mounting structure 22 is a planar heat sink that also functions to dissipate heat generated by the first switching module SM1 and the second switching module SM2.

As discussed above, the multiple transistors Q and diodes D may be majority carrier devices, thereby decreasing the switching time and losses associated with each one of the transistors Q and diodes D. Accordingly, the power module 10 may operate at higher frequencies, and suffer smaller switching losses than a conventional power module. Further, the transistors Q and diodes D may be wide band-gap devices, such as SiC devices. As discussed above, using SiC for the transistors Q and diodes D significantly reduces the switching time and switching losses of the transistors Q and diodes D, thereby increasing the performance of the power module 10.

FIG. 5 shows an exemplary mounting structure 22 and details of the power substrates 20 according to one embodiment of the present disclosure. As shown in FIG. 5, the first power substrate 20A, the second power substrate 20B, the third power substrate 20C, and the fourth power substrate 20D are provided on the mounting structure 22. The first power substrate 20A includes three of the six transistors Q1 ₁₋₃, three gate resistors R_(G), and three of the six anti-parallel diodes D1 ₁₋₃ of the first switching module SM1. The second power substrate 20B includes the remaining transistors Q1 ₄₋₆, gate resistors R_(G), and anti-parallel diodes D1 ₄₋₆ of the first switching module SM1. Similarly, the third power substrate 20C includes three of the six transistors Q2 ₁₋₃, three gate resistors R_(G), and three of the six anti-parallel diodes D2 ₁₋₃ of the second switching module SM2. The fourth power substrate 20D includes the remaining transistors Q2 ₄₋₆, gate resistors R_(G), and anti-parallel diodes D2 ₄₋₆ of the second switching module SM2. The thicker, dark lines represent wire-bonds between the various components in the power module 10 and between the various components and one or more outputs 24 of the power module 10. The outputs 24 of the power module 10 include the first gate connector G1, the second gate connector G2, the first source return connector S1, and the second source return connector S2 discussed above. Other interconnects between the components on the power substrates 20 are provided by metal traces. Notably, a gate bus 26 is provided on the power substrates 20, and runs between the gate contacts G of the transistors Q2 ₁₋₆ in the second switching module SM2 and the outputs 24 of the power module 10. Specifically, the gate bus 26 runs between the gate contacts G of the transistors Q2 ₁₋₆ in the second switching module SM2 and the second gate connector G2, and may further provide a low power path from the source contacts S of the transistors Q2 ₁₋₆ in the second switching module SM2 and the second source return connector S2. The gate bus 26 is a metal trace on each one of the power substrates 20, which reduces interference in the power module 10 and increases the reliability of the connection between the gate contacts G of the transistors Q2 ₁₋₆ in the second switching module SM2 and the outputs 24 of the power module 10, especially when compared to the “flying” gate connections used in conventional power modules. As illustrated, the mounting structure 22 may form all or part of a heat sink that functions to dissipate heat generated by the first switching module SM1 and the second switching module SM2.

In one embodiment, the gate bus 26 may be replaced with one or more coaxial cables to connect the gate contacts G of the transistors Q2 ₁₋₆ in the second switching module and the outputs 24 of the power module 10. Using coaxial cables to connect the outputs to the gate contacts G of the transistors Q2 ₁₋₆ may provide improved isolation when compared to other solutions, thereby improving the performance of the power module 10. Further, although the outputs 24 for the gate contacts G of both the switching module SM1 and the second switching module SM2 are provided on the same side of the housing 16 of the power module 10, in other embodiments they may be provided on opposite sides of the housing 16. Providing the outputs 24 for the gate contacts G of the first switching module SM1 and the second switching module SM2 on opposite sides of the housing 16 may provide a shorter connection route to each one of the gate contacts G of the second switching module SM2, thereby reducing interference and improving the ruggedness of the power module 10. Further, providing the outputs 24 for the gate contacts G of the first switching module SM1 and the second switching module SM2 on opposite sides of the housing 16 may reduce the required resistance of the gate resistor R_(G) of each one of the transistors Q2 ₁₋₆ in the second switching module SM2, as a shorter connection path between the gate contacts G and the outputs 24 reduces the amount of oscillation seen by the transistors Q2 ₁₋₆.

FIG. 6 shows further details of the housing 16, the output terminal OUT, the positive power supply terminal DC+, and the negative power supply terminal DC− according to one embodiment of the present disclosure. As shown in FIG. 6, the housing 16 is substantially rectangular, including cutaways for mounting holes M1-M4 used to mount the power module 10 to a platform. Further, the positive power supply terminal DC+, the negative power supply terminal DC−, and the output terminal OUT are shown. As will be appreciated by those of ordinary skill in the art, the stray inductance across the positive power supply terminal DC+ and the negative power supply terminal DC− may cause a decrease in the performance of the power module 10, especially at high frequencies of operation of the power module 10. Accordingly, the positive power supply terminal DC+ and the negative power supply terminal DC− are provided in close proximity to one another, generally less than 1.5 mm apart, in order to mitigate the leakage inductance across the terminals. Further, the terminals may be made wide, generally around 33.5 mm across, in order to maximize the area near the opposing terminal. Generally, the positive power supply terminal DC+ and the negative power supply terminal DC− will have an area between about 150 mm² and 200 mm² within 1.5 mm of the other. In one embodiment, the positive power supply terminal DC+ and the negative power supply terminal DC− have an area of about 187.31 mm² within 1.5 mm of the other. As will be appreciated by those of ordinary skill in the art, the capacitive effect generated by placing a relatively large area of the positive power supply terminal DC+ in close proximity to a large area of the negative power supply terminal DC− effectively reduces the leakage inductance between the terminals, thereby improving the performance of the power module 10.

FIG. 7 shows further details of the housing 16 according to one embodiment of the present disclosure. As shown in FIG. 7, the housing 16 encases the power substrates 20, and provides output terminals for the positive power supply terminal DC+, the negative power supply terminal DC−, the output terminal OUT, and the respective paths to connect the first switching module SM1 and the second switching module SM2 to the control system 12. Notably, the housing 16 and the various output terminals are industry-standard, thereby allowing the power module 10 to be used as a drop-in solution for many pre-existing platforms. Additionally, a creepage divider 28 is provided between each one of the positive power supply terminal DC+, the negative power supply terminal DC−, and the output terminal OUT, which increases the creepage distance between the respective terminals by roughly 50%. Accordingly, the power module 10 may be used in higher voltage applications without the risk of shorting or other damage.

As shown in FIG. 7, one or more unused terminal locations 30 may exist in the housing 16. The unused terminal locations 30 may be used to provide Kelvin connections to one or more components of the power module 10, or may be used to provide connections to NTC temperature sensor modules included in the power module 10 in various embodiments.

FIG. 8 shows a cutaway view of the power module 10 according to one embodiment of the present disclosure. Notably, an additional creepage divider 32 is provided between the positive power supply terminal DC+ and the negative power supply terminal DC−, which isolates the respective nodes from one another and therefore protects against shorting at high voltages while simultaneously allowing the power module 10 to take advantage of a reduction in the leakage inductance between the nodes discussed above.

FIG. 9 shows details of the first power substrate 20A according to one embodiment of the present disclosure. The second power substrate 20B, the third power substrate 20C, and the fourth power substrate 20D may be configured similarly to the first power substrate 20A, but are not shown for brevity. As shown in FIG. 9, the first power substrate 20A is formed on a baseplate 34, which may be copper. Those of ordinary skill in the art will appreciate that many different materials exist for the baseplate 34, all of which are contemplated herein. In one embodiment, the baseplate 34 is aluminum silicon carbide (AISiC), which may be lighter weight and offer better thermal matching with one or more attached components than copper. The baseplate 34 may be shared between each one of the power substrates 20, such that the first power substrate 20A, the second power substrate 20B, the third power substrate 20C, and the fourth power substrate 20D are all formed on the baseplate 34. A direct-bonded-copper (DBC) substrate 36 may be provided over the baseplate 34. The DBC substrate 36 may include a first metal layer 38 on the surface of the baseplate 34, an insulating layer 40 over the first metal layer 38, and a second metal layer 42 over the insulating layer 40 opposite the first metal layer 38. The first metal layer 38 and the second metal layer 42 may be, for example, copper. Those of ordinary skill in the art will appreciate that many different suitable materials for the first metal layer 38 and the second metal layer 42 exist, all of which are contemplated herein. The insulating layer 40 may be, for example, aluminum nitride (AIN). Those of ordinary skill in the art will appreciate that many different suitable materials for the insulating layer 40 exist, for example, aluminum oxide (Al₂O₃) or silicon nitride (Si₃N₄), all of which are contemplated herein.

Using AlN for the insulating layer 40 may provide much higher thermal conductivity when compared to conventional alumina or silicon nitride (SiN) layers. Given the relatively low electrical resistance associated with SiC devices and the low thermal resistance of AlN, the power module 10 can thus handle higher currents than conventional power modules. The thickness of the insulating layer 40 may be selected based on the targeted isolation voltage. Due to the advantages provided by the use of SiC components and the AlN insulating layer 40, the power module 10 is capable of handling greater power than a conventional device of the same size, and/or may be reduced to a smaller size than its conventional counterpart.

Those skilled in the art will recognize improvements and modifications to the preferred embodiments of the present disclosure. All such improvements and modifications are considered within the scope of the concepts disclosed herein and the claims that follow. 

1. (canceled)
 2. A power module comprising: a housing with an interior chamber; and a plurality of switch modules mounted within the interior chamber and interconnected to facilitate switching power to a load wherein each of the plurality of switch modules comprises at least one transistor and at least one diode and the power module is able to block at least 1200 volts, conduct at least 120 amperes, and has switching losses less than 25 milli-Joules.
 3. The power module of claim 2 wherein the power module has switching losses between 1 milli-Joules and 25 milli-Joules.
 4. The power module of claim 2 wherein the power module has switching losses between 1 milli-Joules and 20 milli-Joules.
 5. The power module of claim 2 wherein the power module has switching losses between 1 milli-Joules and 15 milli-Joules.
 6. The power module of claim 2 wherein the at least one transistor and the at least one diode are silicon carbide (SiC) devices.
 7. The power module of claim 6 wherein the at least one transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET) and the at least one diode is a Schottky diode.
 8. The power module of claim 7 wherein the at least one transistor is coupled in anti-parallel with the at least one diode.
 9. The power module of claim 8 wherein the at least one transistor comprises an array of transistors coupled in parallel and the at least one diode comprises an array of diodes coupled in parallel.
 10. The power module of claim 2 wherein the power module is configured to operate at a switching frequency of at least 50 kHz.
 11. A power module comprising: a housing with an interior chamber; at least a first power substrate within the interior chamber, the first power substrate including one or more switch modules on a first surface of the first power substrate for facilitating switching power to a load, wherein each of the one or more switch modules comprise at least one transistor and at least one diode; and a gate connector coupled to a gate contact of the at least one transistor of each of the one or more switch modules via a signal path that includes a shielded cable.
 12. The power module of claim 11 wherein the shielded cable is a coaxial cable.
 13. The power module of claim 11 wherein the power module is able to block at least 1200 volts, conduct at least 120 amperes, and has switching losses less than 25 milli-Joules.
 14. The power module of claim 11 wherein the at least one transistor and the at least one diode are silicon carbide (SiC) devices.
 15. The power module of claim 11 wherein the power module is configured to operate at a switching frequency of at least 50 kHz.
 16. A power module comprising: a housing with an interior chamber; a plurality of switch modules mounted within the interior chamber and interconnected to facilitate switching power to a load wherein each of the plurality of switch modules comprises at least one transistor configured to conduct current in a first direction via a channel in the at least one transistor and conduct current in a second direction opposite the first direction via an internal body diode in the at least one transistor.
 17. The power module of claim 16 wherein the power module is able to block at least 1200 volts, conduct at least 120 amperes, and has switching losses less than 25 milli-Joules.
 18. The power module of claim 16 wherein the at least one transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET).
 19. The power module of claim 16 wherein the at least one transistor is a silicon carbide (SiC) device.
 20. The power module of claim 16 wherein the at least one transistor comprises an array of transistors coupled in parallel.
 21. The power module of claim 16 wherein the power module is configured to operate at a switching frequency of at least 50 kHz. 